Irf mosfet datasheet. Normalized On-Resistance Vs.
Irf mosfet datasheet IRF540N, 2N7000, FDV301N . C International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. * The information appearing here is for comparison purposes only and to use the devices within their specifications, please consult the full datasheet. The HEXFET technology is the key to International Rectifiers advance line of power MOSFET transistors. The IRF540N is an N-Channel Power Mosfet. These insights enable them to make informed decisions during the design and integration process, ensuring maximum efficiency and reliability in their circuits. 5 mOhm; The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. In pulse mode, it can drive a load up to 56 A. com Vishay Siliconix S21-0852-Rev. The Mosfet can switch loads that consume upto 9. Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Units RθJC Junction-to-Case ––– 0. The company was founded in 1947 and was headquartered in El Segundo, California. Alternatives for IRF740. IRF3205 MOSFET Overview. com Vishay Siliconix S21-0819-Rev. 7 irf3704zspbf irf3704zpbf 20 8. 5A. Manufacturer: Part # Datasheet: Description: STMicroelectronics: IRF630S: 85Kb / 8P: N - CHANNEL 200V - 0. Page: 8 Pages. IRF630 www. Popular IRF540 and IRFZ44 MOSFET Transistors Available; Wide Selection of Current Ratings and Packages; Large Quantity Discounts Available; Ratings Table Datasheet: Description: NXP Semiconductors: BSP100: 111Kb / 8P: N-channel enhancement mode TrenchMOS transistor February 1999 Rev 1. 2A continuous current and operate below IRF840, SiHF840 www. , IRF520NL: 1Mb / 10P: Low-profile through-hole (IRF520NL) Inchange Semiconductor IRF520NL: 300Kb / 2P: Isc N-Channel MOSFET Transistor International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. Alternatives for IRF3205. . 500 Volt, 0. com Vishay Siliconix S21-0853-Rev. 2. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. 4 20 22 irf3717pbf 20 5. 085 Ohm, N-Channel Power MOSFET List of Unclassifed Man IRF250: 84Kb / 2P: 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED IXYS Corporation: IRF250: 49Kb / 1P: High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series May 15, 2019 · About IRF830 MOSFET. C, 02-Aug-2021 4 Document Number: 91031 For technical questions, contact: hvm@vishay. 4 60 9. Jan 6, 2019 · Note: Complete Technical Details can be found at the IRF3205 datasheet given at the end of this page. 1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D, Drain-to-Source Current (A) 3. 5Ω. 9 Rev. com 3 Fig 1. It is compatible to sustain 14 A of continuous current with 100 V voltage. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. If you need a relatively high current Mosfet you can check the IRF840. 150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. Typical Output Characteristics Fig 3. One considerable disadvantage of the IRF840 Mosfet is its high on-resistance (RDS) value which is about 0. com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. C, 02-Aug-2021 4 Document Number: 91019 For technical questions, contact: hvm@vishay. 75 IRF3205 - IR - International Rectifier International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. IRF SMD Series Specifications. 5 353 160 irf1324pbf* 24 1. 000: IRFZ24N: 64Kb / 8P: N-channel enhancement mode TrenchMOS transistor February 1999 Rev 1. com Vishay Siliconix S21-0867-Rev. C, 16-Aug-2021 4 Document Number: 91078 For technical questions, contact: hvm@vishay. IRF9640 www. 1 • Update datasheet to Infineon format • –page 8 • Added disclaimer on last page. File Size: 64Kbytes. International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc. 0V 9. 6 340 The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. Datasheet: Description: Inchange Semiconductor IRF520N: 294Kb / 2P: isc N-Channel MOSFET Transistor International Rectifier: IRF520NL: 195Kb / 11P: Advanced Process Technology Kersemi Electronic Co. The International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. 055廓 - 22A TO-220 LOW GATE CHARGE STripFET??II POWER MOSFET Vishay HEXFET® Power MOSFET Seventh Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. 3 irfr3704zpbf 24 1. 50ohm - 30A - TO-220/TO-220FI POWER MOSFET Fairchild Semiconductor: IRF540: 146Kb / 5P: N-Channel Power MOSFETs, 27 A, 60-100V International Rectifier: IRF540: 177Kb / 6P: HEXFET POWER MOSFET STMicroelectronics: IRF540: 311Kb / 8P: N-CHANNEL 100V - 0. Description: N-channel enhancement mode TrenchMOS transistor. Typical Transfer Characteristics Fig 4. Hence, it is widely used in industrial applications for power dissipation levels up to 43W. 75 ohm - 5. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. IRF610 www. 000: IRFZ44NS: 70Kb / 8P: N-channel enhancement mode TrenchMOS transistor February 1999 Rev 1. This component is available at a lower cost. com voltage (v) rds(on) @10vgs max (mΩ) id @ 25°c (a) qg typ (nc) pqfn 5x6 so-8 d-pak d2pak d2pak-7 to-220 to-247 20 4. 8 www. 85 IRF530 www. 0 429 180 irf1324s-7ppbf 24 1. 000: STMicroelectronics: IRF840: 93Kb / 8P: N - CHANNEL 500V - 0. 29 Ω typ. Manufacturer: NXP Semiconductors. For example, parts with lead (Pb) terminations are not RoHS-compliant. Aug 20, 2021 · IRF510 is a third-generation Power MOSFET with the best combination of fast switching and low on-state resistance. N - CHANNEL100V - 00. 75ohm - 8A - TO-220 PowerMESH] MOSFET Samsung semiconductor: IRF840: 272Kb / 5P: N-CHANNEL POWER MOSFETS Fairchild Semiconductor: IRF840: 150Kb / 5P: N MOSFET Packaging Symbol Features • Ultra Low On-Resistance-r DS(ON) = 0. The devices are ideal for low frequency applications requiring performance and ruggedness. 5A - TO-220 PowerMESH] MOSFET. The IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. HEXFET® Power MOSFET 01/25/01 Absolute Maximum Ratings Parameter Typ. 040 Data Sheet January 2002 ©2002 Fairchild Semiconductor Corporation IRF540N Rev. IRF540N, IRF3205 Other N-channel MOSFETS. High Power, Fast Switching, Quality MOSFET Transistors from International Rectifier, Vishay and Infineon Features. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF Series MOSFETs are available at Mouser Electronics. IRFZ44 www. com 1 9/14/99 SMPS MOSFET IRF740A HEXFET® Power MOSFET l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Mar 21, 2019 · Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU. 85 Ohm HEXFET TO-220AB Plastic Package. BSS138, IRF520, 2N7002, BS170, BSS123, IRF3205, IRF1010E . st. 270 Ohm, N-Channel Power MOSFET November 1999: Vishay Siliconix: IRF520: 135Kb / 8P: Power N-channel 200 V, 0. 0V 5. 0V 4 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. D, 16-Aug-2021 4 Document Number: 91047 For technical questions, contact: hvm@vishay. Electronic Components Datasheet Search English Jan 12, 2019 · Note: Complete technical details can be found at the IRF520 datasheet linked at the bottom of the page . Part #: IRFZ44N. C, 25-Oct-2021 3 Document Number: 91291 For technical questions, contact: hvm@vishay. This technology matches and improves the performances compared with standard parts from various sources. HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. Temperature 0. C, 02-Aug-2021 4 Document Number: 91023 For technical questions, contact: hvm@vishay. com Return to Index Motion Control Technical Documents AN-978B - HV Floating MOS-Gate Driver ICs International Rectifier’s family of MOS-gate drivers (MGDs) integrate most of the functions required to drive one high side and one low side power MOSFET or IGBT in a compact, high performance package. D, 02-May-16 4 Document Number: 91070 For technical questions, contact: hvm@vishay. com Vishay Siliconix S16-0754-Rev. Mar 19, 2019 · Note: Complete technical details can be found at the IRF740 datasheet linked at the bottom of the page . 35ohm - 9A - D2PAK MESH OVERLAY] MOSFET IRF640: 107Kb / 9P: N - CHANNEL 200V - 0. IRF9540 www. Please see the information / tables in this datasheet for details. 5V 20µs PULSE WIDTH Tj = 25°C VGS TOP 10. Mouser offers inventory, pricing, & datasheets for IRF Series MOSFETs. Normalized On-Resistance Vs. irf. The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. vishay. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. IRF520 MOSFET Overview. Other N-channel MOSFETS. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for Sep 2, 2021 · IRF530 is an N-channel MOSFET designed for high-speed and high-power applications. Electronic Components Datasheet Search English Chinese : German 0. 0V 8. com Data and specifications subject to change without notice. IRFB13N50A, UF450A, SSF13N15 . This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides IRF520 www. 7 93 18 irfr3711zpbf 20 6. Electronic Components Datasheet Search English International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. D, 16-Aug-2021 4 Document Number: 91086 For technical questions, contact: hvm@vishay. IRF520 MOSFET Alternatives. Manufacturer: STMicroelectronics. 0V 7. Comments 11/25/2024 Updated Part marking 2. The IRF3205 is a high current N-Channel MOSFET that can switch currents upto 110A IRF MOSFET Power Transistors. 0V 6. 1, 2024-11-25 IRFP4568PbF Revision History Date Rev. com 1 TO-247AC 6/23/99 SMPS MOSFET IRFP460A HEXFET® Power MOSFET l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Datasheet: Description: NXP Semiconductors: IRF840: 60Kb / 7P: PowerMOS transistor Avalanche energy rated March 1999 Rev 1. The IRF840 is an N-Channel Power MOSFET which can switch loads upto 500V with a drain current of 4. POWER MOSFET ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain Notes 1) Pulse Test: Pulse Width ≤300µs, δ≤2%. , El Segundo, California 90245, USA Tel: (310) 252-7105 55 V Single N-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. D, 02-Aug-2021 4 Document Number: 91015 For technical questions, contact: hvm@vishay. Description: N - CHANNEL 400V - 0. IR MOSFET™ N-channel Power MOSFET ; TO-220 package; 4. 2N7000, FDV301N . Please see the information / tables in this datasheet for details DESCRIPTION Third generation Power MOSFETs from Vishay provide theQ www. Download. IRF730 www. 0 92 16 irf3711zspbf irf3711zpbf 20 7. com Vishay Siliconix S21-1045-Rev. Max. 48 ohm - 10 A - TO-220 PowerMESH] MOSFET. IR WORLD HEADQUARTERS: 233 Kansas St. IRF1405, IRF1407, IRF3305, IRFZ44N, IRFB3077, IRFB4110 . com IRF510 www. C, 02-Aug-2021 4 Document Number: 91017 For technical questions, contact: hvm@vishay. Both Mosfet has a gate threshold voltage of 10V across the Gate and Source pin with a on-state resistance of 1. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide Within the pages of the Irf Mosfet datasheet, engineers will find a wealth of information regarding its operating parameters, thermal characteristics, and distortion-free behavior. , 9 A, STripFET™ Power MOSFET in a TO‑220 package IRF630 Datasheet DS0668 - Rev 10 - December 2018 For further information contact your local STMicroelectronics sales office. www. N-CHANNEL POWER MOSFET Intersil Corporation: IRF250: 57Kb / 7P: 30A, 200V, 0. Typical Output Characteristics Fig 2. 9 67 8. This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. 000: IRFZ48N: 65Kb / 8P www. About IRF740 MOSFET.
kcipdnv
tfo
mytphz
jhfizj
axvf
alpfhj
oozzgfw
uffmu
jms
kiic